熱プラズマCVDによるシリコン薄膜の堆積方法

Title:

熱プラズマCVDによるシリコン薄膜の堆積方法

Document Type and Number:

Japanese Patent JP4743730

Kind Code:

B2

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Inventors:

Toyonobu Yoshida
Keisuke Eguchi
Cai Yi
Hiroshi Ohno

Application Number:

JP2000238074A

Publication Date:

August 10, 2011

Filing Date:

August 07, 2000

Export Citation:

Assignee:

Yoshinobu Yoshida

International Classes:

C23C16/24; H01L21/205; C23C16/50

Domestic Patent References:

Attorney, Agent or Firm:

Shigeru Inaba

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