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Title:
n型窒化物半導体の電極及びn型窒化物半導体の電極の形成方法
Document Type and Number:
Japanese Patent JP4752394
Kind Code:
B2
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Inventors:
Kazuki Daejeon
Application Number:
JP2005240859A
Publication Date:
August 17, 2011
Filing Date:
August 23, 2005
Export Citation:
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Assignee:
NEC
International Classes:
H01L21/28; H01L21/338; H01L29/417; H01L29/778; H01L29/812; H01L33/32; H01L33/36; H01L33/40; H01S5/042; H01S5/323
Domestic Patent References:
JP2005191326A
JP10303460A
JP2000277802A
Attorney, Agent or Firm:
Yasuo Ishikawa
Takahiro Imai



 
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