Title:
基板のプラズマ処理を調節するための方法、プラズマ処理システム、及び、電極組体
Document Type and Number:
Japanese Patent JP4754757
Kind Code:
B2
Abstract:
A method of adjusting plasma processing of a substrate in a plasma reactor having an electrode assembly. The method includes the steps of positioning the substrate in the plasma reactor, creating a plasma in the plasma reactor, monitoring optical emissions emanating from a plurality of different regions of the plasma in a direction substantially parallel to the surface of the substrate during plasma processing of the substrate, and determining an integrated power spectrum for each of the different plasma regions and comparing each of the integrated power spectra to a predetermined value. One aspect of the method includes utilizing an electrode assembly having a plurality of electrode segments and adjusting RF power delivered to the one or more electrode segments based on differences in the integrated power spectra from the predetermined value. Another aspect of the invention includes altering the flow of gas to different regions of the plasma in response to differences in the integrated power spectra detected by the fiber optic sensors. Several types of novel electrode assemblies suitable for carrying out the method of the invention are also disclosed.
Inventors:
Liu, Liang Jun
Johnson, Wayne El
Johnson, Wayne El
Application Number:
JP2001573863A
Publication Date:
August 24, 2011
Filing Date:
March 30, 2001
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/3065; B01J3/00; B01J19/08; C23C14/34; C23C16/509; C23C16/52; H01J37/32; H01L21/205; H05H1/00; H05H1/46
Domestic Patent References:
| JPH10294305A | 1998-11-04 |
Attorney, Agent or Firm:
Sadao Muramatsu
Ryo Hashimoto
Toshio Shirane
Ryo Hashimoto
Toshio Shirane