Title:
固体撮像装置
Document Type and Number:
Japanese Patent JP4764243
Kind Code:
B2
Abstract:
A solid-state imaging device that suppresses crosstalk of light in a semiconductor substrate that caused by diffraction of light is disclosed. According to one aspect of the present invention, there is provided a solid-state imaging device comprising a plurality of pixels, each pixel comprising a photoelectric conversion element that is provided in a semiconductor substrate and performs photoelectric conversion of incident light to store signal charges, a floating junction that is provided in the semiconductor substrate in the proximity of the photoelectric conversion element and temporarily stores signal charges, and a transfer transistor that transfers the signal charges stored in the photoelectric conversion element to the floating junction, wherein at least one transfer transistor includes a gate electrode extended to cover a corresponding photoelectric conversion element.
Inventors:
Naruse Junji
Nagataka Tanaka
Nagataka Tanaka
Application Number:
JP2006117046A
Publication Date:
August 31, 2011
Filing Date:
April 20, 2006
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L27/146; H04N5/335; H04N5/359; H04N5/369; H04N5/374
Domestic Patent References:
| JP53035322A | ||||
| JP2005129965A | ||||
| JP2001339056A |
Attorney, Agent or Firm:
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto