To secure a sure read-out operation of information by using a spin injection magnetization reversal type storage element in a storage cell.

The device is provided with: bit lines 2a, 2b; a word decode line Xm; a memory cell 1 having a pair of memory elements 3a, 3b in which the one end sides are connected respectively to corresponding one of the bit lines 2a, 2b; and transistors 4 arranged between respective other end sides of the storage elements 3a, 3b and the word decode line Xm. The transistor 4 allows a write current Id to flow from a bit line of a high potential to a bit line of a low potential in the bit lines 2a, 2b by connecting respective bit lines 2a, 2b to each other through respective memory elements 3a, 3b when information is written, and allows current Ia1, Ia2 to flow from the word decode line Xm to the bit lines 2a, 2b by connecting the word decode line Xm to the respective bit lines 2a, 2b through the memory elements 3a, 3b when the information is read.

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