Title:
半導体装置
Document Type and Number:
Japanese Patent JP4772183
Kind Code:
B2
Abstract:
A semiconductor apparatus for increasing operating current is provided. The semiconductor apparatus is composed of a P-channel MISFET (Metal Insulator Semiconductor Field Effect Transistor) including a first gate insulator which contains first positive charges therein, and an N-channel MISFET including a second gate insulator which contains second positive charges therein. A first charge density of the first positive charge is larger than a second charge density of the second positive charge.
Inventors:
Koichi Ando
Makoto Makiko
Shin Koyama
Makoto Makiko
Shin Koyama
Application Number:
JP2000364245A
Publication Date:
September 14, 2011
Filing Date:
November 30, 2000
Export Citation:
Assignee:
Renesas Electronics Corporation
International Classes:
H01L21/225; H01L27/092; H01L21/265; H01L21/8238; H01L29/78
Domestic Patent References:
| JP3245563A | ||||
| JP11317461A | ||||
| JP55030888A | ||||
| JP1296670A | ||||
| JP7106574A | ||||
| JP10189972A | ||||
| JP11163345A | ||||
| JP7176743A | ||||
| JP8250742A | ||||
| JP4157766A |
Attorney, Agent or Firm:
Kato Asamichi