Title:
半導体発光素子及びその製造方法
Document Type and Number:
Japanese Patent JP4777757
Kind Code:
B2
Abstract:
A semiconductor light emitting device includes a semiconductor layer having a recess extending downwardly from a top surface thereof along a pattern of a closed line so that said recess defines and encloses a region of the semiconductor layer that emits light, said semiconductor layer having a downward slope in at least a portion of its side end face located outside the closed line pattern of said recess; a first electrode on said downward slope of the side end face of the semiconductor layer and electrically in contact with a portion of said semiconductor layer, wherein said first electrode downwardly reflects light that is emitted by said semiconductor layer and that reaches the first electrode; and a second electrode electrically in contact with a portion of said semiconductor layer located inside the closed line pattern of said recess.
Inventors:
Shinichi Tanaka
Naofumi Horio
Munehiro Kato
Satoshi Tanaka
Naofumi Horio
Munehiro Kato
Satoshi Tanaka
Application Number:
JP2005348273A
Publication Date:
September 21, 2011
Filing Date:
December 01, 2005
Export Citation:
Assignee:
Stanley Electric Co., Ltd.
International Classes:
H01L33/10; H01L33/32; H01L33/38; H01L33/40; H01L33/62
Domestic Patent References:
| JP2003347589A | ||||
| JP2003031858A | ||||
| JP5160437A | ||||
| JP2003101074A | ||||
| JP2002528898A | ||||
| JP2004071644A | ||||
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| JP2005117020A | ||||
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Attorney, Agent or Firm:
Keishiro Takahashi
Mikio Kuruyama
Mikio Kuruyama