Title:
不揮発性強誘電体メモリを利用したテストモード制御装置
Document Type and Number:
Japanese Patent JP4790988
Kind Code:
B2
Abstract:
A test mode control device using a nonvolatile ferroelectric memory enables a precise test of characteristics of a memory cell array by changing a reference voltage and timing regulated for a memory cell test in a software system without extra processes. In an embodiment, test modes and arrangement of data pins are programmed using a nonvolatile ferroelectric memory, and addresses, control signals and arrangement of data pins are regulated in a software system depending on a programmed code. As a result, characteristics of a cell array can be precisely tested without extra processes.
Inventors:
Ginger Hui Fuku
Application Number:
JP2004016051A
Publication Date:
October 12, 2011
Filing Date:
January 23, 2004
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
G01R31/28; G11C11/22; G11C29/14; G11C29/12; G11C29/50
Domestic Patent References:
| JP6216328A | ||||
| JP2002216498A | ||||
| JP11149800A | ||||
| JP10206501A | ||||
| JP5144296A | ||||
| JP2003288793A | ||||
| JP2000208716A |
Attorney, Agent or Firm:
Teruichi Hase
Maki Kamiya
Maki Kamiya