Title:
転写用マスクの製造方法及び半導体デバイスの製造方法
Document Type and Number:
Japanese Patent JP4797114
Kind Code:
B2
Abstract:
Provided is a transfer mask which has a transfer pattern formed in a pattern-forming thin film provided on a transparent substrate and is adapted to be applied with exposure light having a wavelength of 200 nm or less. The pattern-forming thin film is made of a material containing silicon an a transition metal other than chromium and the chromium content in the film is less than 1.0×1018 atoms/cm3.
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Inventors:
Hashimoto Masahiro
Kazuya Sakai
Suzuki Toshiyuki
Ono Ichiho
Kazuya Sakai
Suzuki Toshiyuki
Ono Ichiho
Application Number:
JP2010226226A
Publication Date:
October 19, 2011
Filing Date:
October 06, 2010
Export Citation:
Assignee:
HOYA CORPORATION
International Classes:
G03F1/32; G03F1/54; G03F1/82
Domestic Patent References:
| JP2009244752A |
Foreign References:
| WO2008139904A1 | ||||
| WO2011046075A1 |
Attorney, Agent or Firm:
Yasuo Fujimura