Title:
半導体レーザ素子及びその製造方法
Document Type and Number:
Japanese Patent JP4799847
Kind Code:
B2
Inventors:
Atsushi Nakamura
Application Number:
JP2004319489A
Publication Date:
October 26, 2011
Filing Date:
November 02, 2004
Export Citation:
Assignee:
Japan Opnext Co., Ltd.
International Classes:
H01S5/16; H01S5/042
Domestic Patent References:
| JP3231483A | ||||
| JP2002190644A | ||||
| JP2003023218A | ||||
| JP10223992A | ||||
| JP11068217A | ||||
| JP2003158339A |
Attorney, Agent or Firm:
Yamato Tsutsui