To provide a semiconductor device in which a plurality of semiconductor elements are laminated, which is high in the degree of freedom of selection of a chip size of a semiconductor element and wiring connection and is excellent in reliability and high speed of signal transmission between semiconductor elements.
The semiconductor device 100 includes a lower side semiconductor chip 104, an upper side semiconductor chip 106, and a silicon spacer 108 which is located between the lower side semiconductor chip 104 and upper side chip 106 and has an extensive portion extended in an outward direction more than the outer circumference of the upper side semiconductor chip 106. The silicon spacer 108 has through-electrodes 190a, 190b and rewiring 128a, 128b.
COPYRIGHT: (C)2009,JPO&INPIT
Nobuaki Takahashi
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Kana Nomoto
Satoshi Amagi