Title:
半導体デバイスの空洞内に所定の内圧を形成する方法
Document Type and Number:
Japanese Patent JP4809848
Kind Code:
B2
Abstract:
A method of creating a predefined internal pressure within a cavity of a semiconductor device, the method including providing the semiconductor device, the semiconductor device including a semiconductor oxide area which is continuously arranged between the cavity of the semiconductor device and an external surface of the semiconductor device, exposing the semiconductor device to an ambient atmosphere with a noble gas at a first temperature for a predetermined time period, and setting a second temperature, which is different from the first, after the predetermined time period has expired, the semiconductor oxide area exhibiting a higher permeability for the noble gas at the first temperature than at the second temperature.
Inventors:
Kwenzer Hans Joachim
Meltz Peter
Old Sen Martin
Reinert Wolfgang
Meltz Peter
Old Sen Martin
Reinert Wolfgang
Application Number:
JP2007550731A
Publication Date:
November 09, 2011
Filing Date:
January 04, 2006
Export Citation:
Assignee:
Fraunhofer-Gesellschaftsza Felderung der Angewanten Vorschung A. Fao
International Classes:
H01L23/20; B81C1/00; G01C19/56; G01P9/04; H01L23/02
Domestic Patent References:
| JP2003309245A | 2003-10-31 | |||
| JP2006513046A | 2006-04-20 | |||
| JP2008524008A | 2008-07-10 |
Attorney, Agent or Firm:
Masahiro Okada