フルモールド型半導体装置 - Nippon Inter Co., Ltd.

Title:

フルモールド型半導体装置

Document Type and Number:

Japanese Patent JP4809984

Kind Code:

B2

More Like This:

JPH01253263	MANUFACTURE OF FUSE DIODE
JP2889407	INDUSTRIAL APPLICABILITY: Vertical semiconductor interconnection method and structure

Inventors:

Murayama Hidemi
Yoshiyuki Matsumoto
Norio Murai
Masashi Anashi

Application Number:

JP2001053251A

Publication Date:

November 09, 2011

Filing Date:

February 28, 2001

Export Citation:

Assignee:

Nippon Inter Co., Ltd.

International Classes:

H01L25/04; H01L25/18; H01L23/48

Domestic Patent References:

Attorney, Agent or Firm:

Hiroki Sasai

Previous Patent: 生体高分子とリガンドとの相互作用を検出する装置及びその方法

Next Patent: ３−アリールプロピルアミンの製造法