To obtain a solid-state imaging device having high sensitivity without increasing manufacturing processes.

The method of manufacturing the solid-state imaging device forms, on a substrate, a photodiode for generating optically generated charges corresponding to an incident light, an accumulating section to which the optically generated charges generated in the photodiode are transferred, and a detecting section for detecting a charge quantity of the optically generated charges accumulated in the accumulating section. The method is provided with a first step of introducing one conductivity-type first impurities into the substrate in a forming region of the photodiode; and a second step of discretely introducing another conductivity-type second impurities into a plurality of positions so that an injection quantity per unit area increases in proportion to a distance from the accumulating section, in the forming region of the photodiode.

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