Title:
酸化層及びシリコン層のインサイチュウ成長
Document Type and Number:
Japanese Patent JP4851647
Kind Code:
B2
Abstract:
A single-wafer, chemical vapor deposition reactor (10) is provided with hydrogen and silicon source gases (72, 74, 86) suitable for epitaxial silicon deposition, as well as a safe mixture (70) of oxygen in a non-reactive gas. Methods are provided for forming oxide and silicon layers within the same chamber (12). In particular, a sacrificial oxidation (102) is performed, followed by a hydrogen bake (104) to sublime the oxide and leave a clean substrate. Epitaxial deposition (106) can follow in situ. A protective oxide can also be formed (108) over the epitaxial layer within the same chamber, preventing contamination of the critical epitaxial layer. Alternatively, the oxide layer (124) can serve as the gate dielectric, and a polysilicon gate layer (126) can be formed (112) in situ over the oxide (124).
Inventors:
Ferro Armando
Large McKells Ifo
Foster derrick
Large McKells Ifo
Foster derrick
Application Number:
JP2000527689A
Publication Date:
January 11, 2012
Filing Date:
January 08, 1999
Export Citation:
Assignee:
ASM America Inc.
International Classes:
H01L21/205; C23C16/44; C23C16/48; C30B25/02; H01L21/28; H01L21/31; H01L21/316; H01L21/336; H01L21/311
Domestic Patent References:
| JP669195A | ||||
| JP9102594A | ||||
| JP778808A |
Attorney, Agent or Firm:
Fumihiko Yagisawa