Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP4856861
Kind Code:
B2
Abstract:
To provide a method for manufacturing a semiconductor device, in which lift-off of a large area semiconductor layer can be carried out at a high speed.
The process for fabricating a semiconductor device comprises a step of forming a semiconductor layer 3 on a semiconductor substrate 2 via an etching layer 6, a step of forming an etching mask 10 on the semiconductor layer 3, a step of bonding a support substrate 11 onto the etching mask 10, and a step of carrying out lift-off of the semiconductor layer 3 by removing the etching layer 6. The support substrate 11 applies tensile stress to the semiconductor substrate 2 and the semiconductor layer 3, when the etching layer 6 is removed.
COPYRIGHT: (C)2006,JPO&NCIPI
Inventors:
Nao Takahashi
Application Number:
JP2004211815A
Publication Date:
January 18, 2012
Filing Date:
July 20, 2004
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L31/04; H01L21/306
Domestic Patent References:
| JP9186240A | ||||
| JP6151946A | ||||
| JP6151720A | ||||
| JP2003324081A |
Other References:
J. J. Schermer et al.,High rate epitaxial lift-off of InGaP films from GaAs substrates,APPLIED PHYSICS LETTERS,2000年 4月10日,Vol.76,No.15,pp.2131-2133
Attorney, Agent or Firm:
Shintaro Nogawa