Title:
半導体装置及びその製造方法
Document Type and Number:
Japanese Patent JP4880958
Kind Code:
B2
Abstract:
The present invention discloses a semiconductor device and a manufacturing method thereof which improves its characteristics even though it is miniaturized. According to one aspect of the present invention, it is provided a semiconductor device comprising a first semiconductor element device including a pair of first diffusion layers formed in the semiconductor substrate with a first gate electrode therebetween, and a first conductor layer formed in the first diffusion layer and having an internal stress in a first direction, and a second semiconductor element device including a pair of second diffusion layers formed in the semiconductor substrate with a second gate electrode therebetween, and a second conductor layer formed in the second diffusion layer, having an internal stress in a second direction opposite to the first direction, and constituted of the same element as that of the first conductor layer.
Inventors:
Toshihiko Iinuma
Application Number:
JP2005270773A
Publication Date:
February 22, 2012
Filing Date:
September 16, 2005
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/8238; H01L21/28; H01L21/336; H01L27/092; H01L29/417; H01L29/78
Domestic Patent References:
| JP2003273240A |
Attorney, Agent or Firm:
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto