Title:
絶縁ゲイト型半導体装置およびその作製方法
Document Type and Number:
Japanese Patent JP4896699
Kind Code:
B2
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Inventors:
Shunpei Yamazaki
Application Number:
JP2006344148A
Publication Date:
March 14, 2012
Filing Date:
December 21, 2006
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/78; H01L21/336; H01L21/8238; H01L21/8249; H01L27/06; H01L27/092; H01L29/786
Domestic Patent References:
| JP4250668A | ||||
| JP61185973A | ||||
| JP51110279A | ||||
| JP4003468A | ||||
| JP53068177A | ||||
| JP62276874A | ||||
| JP8247330A |