Title:
不揮発性半導体記憶装置およびその製造方法
Document Type and Number:
Japanese Patent JP4902716
Kind Code:
B2
Abstract:
A technique capable of improving the memory retention characteristics of a non-volatile memory is provided. In particular, a technique of fabricating a non-volatile semiconductor memory device is provided capable of enhancing the film quality of a silicon oxide film even when a silicon oxide film as a first potential barrier film is formed with a plasma oxidation method to improve the memory retention characteristics of the non-volatile memory. After a silicon oxide film, which is a main component of a first potential barrier film, is formed with a plasma oxidation method, plasma nitridation at a high temperature and a heat treatment in an atmosphere containing nitric oxide are performed in combination, thereby forming a silicon oxynitride film on the surface of the silicon oxide film, and segregating nitrogen to an interface between the silicon oxide film and a semiconductor substrate.
Inventors:
Katsuhiko Yamamoto
Tadashi Terasaki
Yanamoto Kinki
Hirotaka Hamamura
Tadashi Terasaki
Yanamoto Kinki
Hirotaka Hamamura
Application Number:
JP2009230759A
Publication Date:
March 21, 2012
Filing Date:
October 02, 2009
Export Citation:
Assignee:
Hitachi Kokusai Electric Co., Ltd.
International Classes:
H01L21/8247; H01L27/115; H01L29/788; H01L29/792
Domestic Patent References:
| JP9326478A | ||||
| JP2008103666A | ||||
| JP2007129240A | ||||
| JP2006156626A | ||||
| JP2004040064A |
Attorney, Agent or Firm:
Yamato Tsutsui