Title:
差分スパッタリング速度を減少する装置及び方法
Document Type and Number:
Japanese Patent JP4906214
Kind Code:
B2
Abstract:
A charged particle beam uniformly removes material, particularly crystalline material, from an area of a target by compensating for or altering the crystal orientation or structure of the material to be removed. The invention is particularly suited for FIB micromachining of copper-based crystalline structures. Uniformity of material removal can be improved, for example, by passing incoming ions through a sacrificial layer formed on the surface of the material to be removed. The sacrificial layer is removed along with the material being milled. Uniformity of removal can also be improved by changing the morphology of the material to be removed, for example, by disrupting its crystal structure or by altering its topography.
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Inventors:
Faneuf, Michael W
Li, Jien
Li, Jien
Application Number:
JP2001566177A
Publication Date:
March 28, 2012
Filing Date:
March 12, 2001
Export Citation:
Assignee:
FEI COMPANY
International Classes:
B23K15/00; C23F4/00; C23F4/04; G03F1/74; H01J37/305; H01L21/302; H01L21/3205; H01L23/52
Domestic Patent References:
| JP4186831A | ||||
| JP4080367A | ||||
| JP7018452A | ||||
| JP3257182A | ||||
| JP2129386A |
Attorney, Agent or Firm:
Tadahiko Ito