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Title:
半導体メモリセルの製造方法
Document Type and Number:
Japanese Patent JP4921981
Kind Code:
B2
Abstract:
A semiconductor memory cell and production method provides a storage capacitor connected to a selection transistor. The storage capacitor is formed as a contact hole capacitor in at least one contact hole for a source or drain region. Such a semiconductor memory cell can be produced cost-effectively and allows a high integration density.

Inventors:
Nilshur, Thomas
Olbrich, Alexander
Martin Oostermeier
Application Number:
JP2006549949A
Publication Date:
April 25, 2012
Filing Date:
December 30, 2004
Export Citation:
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Assignee:
INFINEON TECHNOLOGIES AG
International Classes:
H01L21/8242; H01L27/108; H01L21/02
Domestic Patent References:
JP2000188379A2000-07-04
JP2000223589A2000-08-11
JP2001093990A2001-04-06
JPH11191615A1999-07-13
JPH11261030A1999-09-24
JPH104190A1998-01-06
JP2001068471A2001-03-16
JP2000058784A2000-02-25
Foreign References:
US5172201A1992-12-15
Attorney, Agent or Firm:
Kenzo Hara International Patent Office



 
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