Title:
ツェナーダイオードの製造方法
Document Type and Number:
Japanese Patent JP4978825
Kind Code:
B2
Abstract:
The present invention is directed to a Zener diode and a method for fabricating the same. According to the present invention, a voltage regulator device can be fabricated by carrying out a diffusion process without using a diffusion mask. Further, a PNP (or NPN) Zener diode having a bi-directional threshold voltage characteristic or a PN Zener diode can be fabricated without any photolithographic process or using the minimum number of processes. Therefore, the number of processing steps can be reduced and the yield thereof can be increased.
Inventors:
Kim guno
Issunyeop
Issunyeop
Application Number:
JP2005171232A
Publication Date:
July 18, 2012
Filing Date:
June 10, 2005
Export Citation:
Assignee:
LG ELECTRONICS INC.
International Classes:
H01L29/866; H01L21/328; H01L21/329; H01L29/30; H01L33/00
Domestic Patent References:
| JP6089936A | ||||
| JP7183468A | ||||
| JP63164371A | ||||
| JP62065382A | ||||
| JP8306699A | ||||
| JP6291339A | ||||
| JP2001148181A |
Attorney, Agent or Firm:
Calyx
Miyazaki Yoshio
Kaoru Onozuka
Akio Tagami
High Masahiro
Toshio Nakamura
Tsutomu Kato
Yusuke Murakoshi
Tomoaki Komiya
Miyazaki Yoshio
Kaoru Onozuka
Akio Tagami
High Masahiro
Toshio Nakamura
Tsutomu Kato
Yusuke Murakoshi
Tomoaki Komiya