Title:
シリコン酸化膜及びその製造方法並びにそれを用いたゲート絶縁膜を有する半導体装置
Document Type and Number:
Japanese Patent JP4978847
Kind Code:
B2
Abstract:
The present invention provides a high-performance silicon oxide film as a gate insulation film and a semiconductor device having superior electric characteristics. The silicon oxide film according to the present invention includes CO2 in the film, wherein, when an integrated intensity of a peak is expressed by (peak width at half height)×(peak height) in an infrared absorption spectrum, the integrated intensity of a CO2-attributed peak which appears in the vicinity of a wave number of 2,340 cm−1 is 8E-4 times or more with respect to the integrated intensity of an SiO2-attributed peak which appears in the vicinity of a wave number of 1,060 cm−1.
Inventors:
Shigeru Mori
Hiroshi Tanabe
Jun Tanaka
Hiroshi Tanabe
Jun Tanaka
Application Number:
JP2008136491A
Publication Date:
July 18, 2012
Filing Date:
May 26, 2008
Export Citation:
Assignee:
nlt Technology Co., Ltd.
International Classes:
H01L21/316; H01L21/336; H01L29/786
Domestic Patent References:
| JP2002261285A | ||||
| JP2001230419A | ||||
| JP2007142066A | ||||
| JP2003008027A |
Foreign References:
| WO2005104239A1 |
Attorney, Agent or Firm:
Akio Miyazaki
Ishibashi Masayuki
Masaaki Ogata
Ishibashi Masayuki
Masaaki Ogata