Title:
半導体発光装置
Document Type and Number:
Japanese Patent JP4983346
Kind Code:
B2
Abstract:
The present invention provides a semiconductor light emitting device realizing a lower detection level of spontaneous emission light by a semiconductor photodetector and an improvement in light detection precision by selectively reflecting spontaneous emission light. The semiconductor light emitting device includes a semiconductor light emitting element for generating light including stimulated emission light having a wavelength lambdao and spontaneous emission light having a wavelength band including the wavelength lambdao, a multilayer filter having a stack structure in which a low-refractive-index layer having a thickness of lambda1/(4xna) (lambda1na and nb denote refractive index) are alternately stacked, and a semiconductor photodetector having a light absorption layer that absorbs part of the light passed through the multilayer filter.
Inventors:
Rintaro Koda
Takahiro Arakida
Masui Yuji
Tomoyuki Oki
Takahiro Arakida
Masui Yuji
Tomoyuki Oki
Application Number:
JP2007096653A
Publication Date:
July 25, 2012
Filing Date:
April 02, 2007
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01S5/026; H01S5/183
Domestic Patent References:
| JP8236845A | ||||
| JP2002504754A | ||||
| JP2002514016A | ||||
| JP2000183444A |
Attorney, Agent or Firm:
Yoichiro Fujishima
Yasushi Santanzaki
Yasushi Santanzaki