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Title:
不揮発性半導体メモリ装置
Document Type and Number:
Japanese Patent JP5000293
Kind Code:
B2
Inventors:
ハン イルソク
Application Number:
JP2006356457A
Publication Date:
August 15, 2012
Filing Date:
December 28, 2006
Export Citation:
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Assignee:
マグナチップセミコンダクター有限会社
MAGNACHIP SEMICONDUCTOR LTD
International Classes:
H01L29/792; H01L21/336; H01L21/8247; H01L27/115; H01L29/788
Domestic Patent References:
JP2004165182A
JP2005191057A
JP11111872A
JP60057673A
JP2000031395A
JP2001511308A
JP11087664A
JP2004094922A
Foreign References:
EP0977265A1
Attorney, Agent or Firm:
特許業務法人共生国際特許事務所



 
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