Title:
化学蒸着によりウェハ上にエピタキシャル層を成長させる装置および方法
Document Type and Number:
Japanese Patent JP5004864
Kind Code:
B2
Abstract:
The invention describes a CVD reactor on solid substrates and a related method of deposition of epitaxial layers on the wafers. In the reactor of the invention, the wafer carrier is transported between a loading position and a deposition position. In the deposition position, the wafer carrier is detachably mounted on an upper end of a rotatable spindle without an intermediate susceptor. The reactor of the invention may process a single wafer or a plurality of wafers at the same time. The invention also described several embodiments and variants of the invention. One of the variants of the invention provides a decrease in a heat drain from the wafer-supporting assembly through the spindle and a novel heating arrangement therefore. The advantages of the invention include lower reactor cycle, the lower cost and longer lifetime of the component parts, and better temperature control, among others.
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Inventors:
Bogslavsky, Vadim
Gallery, alexander
Gallery, alexander
Application Number:
JP2008119989A
Publication Date:
August 22, 2012
Filing Date:
May 01, 2008
Export Citation:
Assignee:
Beco Instruments Incorporated
International Classes:
C30B15/12; H01L21/205; C23C16/44; C23C16/458; C23C16/46; C30B25/12; H01L21/687
Domestic Patent References:
| JP10022226A | ||||
| JP11180796A | ||||
| JP2000100726A | ||||
| JP11067674A | ||||
| JP9219369A | ||||
| JP2004513857A |
Foreign References:
| WO2001007691A1 |
Attorney, Agent or Firm:
Shoichi Okuyama
Arihara Koichi
Matsushima Tetsuo
Arihara Koichi
Matsushima Tetsuo