Title:
エッチング液再生装置
Document Type and Number:
Japanese Patent JP5021588
Kind Code:
B2
Abstract:
This invention intends to enable silicon compound to be removed from waste etching solution at a high removal rate and waste etching solution to be recycled without disposing it. The etching solution reproducing apparatus includes: temperature adjusting means for adjusting the temperature of taken out waste etching solution; atomizing means for atomizing waste etching solution adjusted in temperature by the temperature adjusting means; precipitating means for collecting waste etching solution atomized by the atomizing means and precipitating silicon compound in the waste etching solution; and separating means for separating silicon compound precipitated from the waste etching solution by the precipitating means so as to obtain reproduced etching solution.
Inventors:
Hiroshi Watanabe
Application Number:
JP2008210624A
Publication Date:
September 12, 2012
Filing Date:
August 19, 2008
Export Citation:
Assignee:
Chemical Art Technology Co., Ltd.
International Classes:
C02F1/60; H01L21/306
Domestic Patent References:
| JP9275091A | ||||
| JP9219388A | ||||
| JP2009016648A | ||||
| JP58185443A | ||||
| JP2004169590A |
Attorney, Agent or Firm:
Eichi International Patent Office