Title:
半導体装置の製造方法、電気光学装置の製造方法、及び電子機器の製造方法
Document Type and Number:
Japanese Patent JP5023437
Kind Code:
B2
Abstract:
To provide a semiconductor device formed by patterning a semiconductor layer without using a photolithography method; and to provide an electrooptical device, electronic equipment, a method for manufacturing the semiconductor device, a method for manufacturing the electrooptical device, and a method for manufacturing the electronic equipment.
The semiconductor device has first and second conductive films, the semiconductor layer formed on the first and second conductive films, an insulating layer formed on the semiconductor layer, and a coating formed on the insulating layer at the upper portion of a substrate. In this case, the semiconductor layer should be equal to the coating in width.
COPYRIGHT: (C)2007,JPO&INPIT
Inventors:
Soichi Moriya
Application Number:
JP2005106893A
Publication Date:
September 12, 2012
Filing Date:
April 01, 2005
Export Citation:
Assignee:
Seiko Epson Corporation
International Classes:
H01L29/786; G02F1/1343; G02F1/1368; G09F9/30; H01L21/336; H01L51/05
Domestic Patent References:
| JP2006041317A | ||||
| JP2006100808A | ||||
| JP2220472A | ||||
| JP2005072188A |
Foreign References:
| WO2004079833A1 | ||||
| WO2003098696A1 |
Attorney, Agent or Firm:
Yoshiyuki Inaba
Katsuro Tanaka
Shinji Oga
Katsuro Tanaka
Shinji Oga