Title:
磁気トンネル接合型磁気ランダムアクセスメモリのメモリセル、メモリセルアレイ、およびメモリセルの選択記録方法
Document Type and Number:
Japanese Patent JP5036135
Kind Code:
B2
Abstract:
An MTJ MRAM cell element, whose free layer has a shape induced magnetic anisotropy, is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity current carrying layer and a soft adjacent magnetic layer (SAL). During operation, the soft magnetic layer concentrates the magnetic field of the current and, due to its proximity to the free layer, it magnetically couples with the free layer to produce two magnetization states of greater and lesser stability. During switching, the layer is first placed in the less stable state by a word line current, so that a small bit line current can switch its magnetization direction. After switching, the state reverts to its more stable form as a result of magnetostatic interaction with the SAL, which prevents it from being accidentally rewritten when it is not actually selected and also provides stability against thermal agitation.
Inventors:
Guo Imin
Go Wang
Ishinishi Increase
Minoru Yasushi
Go Wang
Ishinishi Increase
Minoru Yasushi
Application Number:
JP2005110125A
Publication Date:
September 26, 2012
Filing Date:
April 06, 2005
Export Citation:
Assignee:
Headway Technologies, Inc.
International Classes:
H01L27/105; G11C11/16; H01L21/8246; H01L43/08
Domestic Patent References:
| JP2002246566A | ||||
| JP2003078112A | ||||
| JP2004296858A |
Attorney, Agent or Firm:
Yasushi Santanzaki
Yoichiro Fujishima
Yoichiro Fujishima