Al配線膜の製造方法

Japanese Patent JP5044509

B2

A sputtering target consists essentially of 0.1 to 50% by weight of at least one kind of element that forms an intermetallic compound with Al, and the balance of Al. The element that forms an intermetallic compound with Al is uniformly dispersed in the target texture, and in a mapping of EPMA analysis, a portion of which count number of detection sensitivity of the element is 22 or more is less than 60% by area ratio in a measurement area of 20x20 mum. According to such a sputtering target, even when a sputtering method such as long throw sputtering or reflow sputtering is applied, giant dusts or large concavities can be suppressed in occurrence.

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Koichi Watanabe
Takashi Ishigami

JP2008223424A

October 10, 2012

September 01, 2008

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Toshiba Corporation

C23C14/34; B22C1/00; C22C21/00; C22C21/02; C22C21/04; C22C21/12; C22C21/14; C22C27/00; C22F1/00; C22F1/04; C23C14/32; G02F1/1343; H01L21/28; H01L21/285; H01L21/3205; H01L21/768; H01L23/12; H01L23/532

JP9241835A
JP8176810A
JP7050299A
JP8037186A

Patent Business Corporation Sakura International Patent Office
Saichi Suyama

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