To provide a method of manufacturing a semiconductor thin-film element that minimizes a decline in electron mobility and simultaneously reduces a temperature dependency of resistance, and uses an InSb thin film containing Sn as an n-type dopant which is excellent in reproducibility and controllability of the thin film.
Sn is doped as a dopant in an operation layer which is comprised of a compound semiconductor thin-film layer including InSb, which is directly or indirectly laminated on a substrate via an organic substance bonding layer or a buffer layer, or when a group III to V compound semiconductor layer adjacent to the operation layer is formed by an MBE method. During the doping process, the temperature of the substrate is kept between 380°C and 400°C and an Sn K cell temperature is kept at 500°C or more and 1,000°C or below.
COPYRIGHT: (C)2010,JPO&INPIT
Shin Murakami
Ichiro Shibasaki
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