Title:
窒化物半導体レーザを作製する方法
Document Type and Number:
Japanese Patent JP5053893
Kind Code:
B2
Abstract:
A method of fabricating a nitride semiconductor laser comprises preparing a substrate having a plurality of marker structures and a crystalline mass made of a hexagonal gallium nitride semiconductor. The primary and back surfaces of the substrate intersect with a predetermined axis extending in the direction of a c-axis of the hexagonal gallium nitride semiconductor. Each marker structure extends along a reference plane defined by the c-axis and an m-axis of the hexagonal gallium nitride semiconductor. The method comprises cutting the substrate along a cutting plane to form a wafer of hexagonal gallium nitride semiconductor, and the cutting plane intersects with the plurality of the marker structures. The wafer has a plurality of first markers, each of which extends from the primary surface to the back surface of the wafer, and each of the first markers comprises part of each of the marker structures. The primary surface of the wafer is semipolar or nonpolar. The method comprises growing a number of gallium nitride based semiconductor layers for a semiconductor laser. The method comprises cleaving the substrate product at a cleavage plane of the hexagonal gallium nitride semiconductor, after forming a substrate product in an electrode forming step.
Inventors:
Takashi Kyono
Katsushi Akita
Zensuke Yusuke
Katsushi Akita
Zensuke Yusuke
Application Number:
JP2008058305A
Publication Date:
October 24, 2012
Filing Date:
March 07, 2008
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
H01S5/323
Domestic Patent References:
| JP2004022785A |
Foreign References:
| WO2003036771A1 | ||||
| WO2007029655A1 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Shiro Terasaki
Yoshiki Kuroki
Ichira Kondo
Hiroto Kido
Masato Ikeda
Shiro Terasaki
Yoshiki Kuroki
Ichira Kondo
Hiroto Kido
Masato Ikeda