Title:
有機トランジスタおよびその製造方法
Document Type and Number:
Japanese Patent JP5066846
Kind Code:
B2
Abstract:
To provide an organic transistor and a manufacturing method therefor which prevent a deterioration in the characteristics of an organic semiconductor when and after a sealing layer for an organic semiconductor layer is formed.
The organic transistor includes a board 001, and a transistor layer 101 formed on the board 001. The transistor layer 101 has a gate electrode, a gate insulating film, a source electrode, a drain electrode, and the organic semiconductor layer. The sealing layer 200 is so formed on the organic semiconductor layer as to at least cover a channel portion. The sealing layer 200 is composed of at least a resin 201 and nonorganic particulates 202.
COPYRIGHT: (C)2008,JPO&INPIT
Inventors:
Kino Osamu
Application Number:
JP2006173898A
Publication Date:
November 07, 2012
Filing Date:
June 23, 2006
Export Citation:
Assignee:
Toppan Printing Co., Ltd.
International Classes:
H01L29/786; H01L21/336; H01L51/05; H01L51/30; H01L51/40
Domestic Patent References:
| JP2006344952A | ||||
| JP2002511606A | ||||
| JP2004304009A | ||||
| JP2005191077A |
Attorney, Agent or Firm:
Shigeru Noda