Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP5107128
Kind Code:
B2
Abstract:
To provide a manufacturing method of a semiconductor device capable of forming, as a protective film of an MTJ element, a silicon nitride film having good insulation properties without deteriorating the properties of the MTJ element. The method of the invention includes steps of forming a silicon nitride film over the entire surface including an MTJ element portion (MTJ element and an upper electrode) while using a parallel plate plasma CVD apparatus as a film forming apparatus and a film forming gas not containing NH3 but composed of SiH4/N2/helium (He). The film forming temperature is set at from 200 to 350° C. More ideally, a flow rate ratio of He to SiH4 is set at from 100 to 125.
Inventors:
Ryuki Murata
Mikio Tsujiuchi
Ryoji Matsuda
Mikio Tsujiuchi
Ryoji Matsuda
Application Number:
JP2008112548A
Publication Date:
December 26, 2012
Filing Date:
April 23, 2008
Export Citation:
Assignee:
Renesas Electronics Corporation
International Classes:
H01L43/08; C23C16/42; H01L21/318; H01L21/8246; H01L27/105; H01L43/12
Domestic Patent References:
| JP2007158301A | ||||
| JP2005039262A | ||||
| JP2005286135A | ||||
| JP2003243630A | ||||
| JP2007305645A | ||||
| JP2002151514A |
Attorney, Agent or Firm:
Yoshitake Hidetoshi
Takahiro Arita
Takahiro Arita