Title:
窒化物半導体発光素子
Document Type and Number:
Japanese Patent JP5130439
Kind Code:
B2
Abstract:
The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.
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Inventors:
Fan, sokumin
Kim, Hyun Kyung
High health
Hong Feng
Lee Kyu-han
Min, Bokgi
Kim, Hyun Kyung
High health
Hong Feng
Lee Kyu-han
Min, Bokgi
Application Number:
JP2006216783A
Publication Date:
January 30, 2013
Filing Date:
August 09, 2006
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
H01L33/42; H01L33/32; H01L33/38
Domestic Patent References:
| JP2000022210A | ||||
| JP2003524295A | ||||
| JP2001345480A | ||||
| JP2000164930A | ||||
| JP10321912A | ||||
| JP2001111103A | ||||
| JP11040854A | ||||
| JP2001077419A | ||||
| JP2004281581A |
Foreign References:
| US20030136965 | ||||
| US6650018 |
Attorney, Agent or Firm:
Kyosei International Patent Office
Konobu Kato
Konobu Kato