Title:
透明導電膜の成膜方法
Document Type and Number:
Japanese Patent JP5145228
Kind Code:
B2
Abstract:
A transparent electroconductive film having a low resistivity is provided. In a film-forming method of the present invention, a transparent electroconductive film is formed on a surface of a substrate by sputtering, in a vacuum atmosphere, a target in which ZnO is a main component and Al2O3 and B2O3 are added, and then the transparent electroconductive film is annealed by the heating thereof at a temperature of 300° C. or more and 400° C. or less. The resistivity of the obtained transparent electroconductive film is reduced because the film has ZnO as the main component and Al and B added thereto. The transparent electroconductive film formed by the present invention is suitable as a transparent electrode for the FDP, etc.
Inventors:
Akihisa Takahashi
Sadayuki Ukishima
Atsushi Ota
Noriaki Tani
Akatsuki Ishibashi
Sadayuki Ukishima
Atsushi Ota
Noriaki Tani
Akatsuki Ishibashi
Application Number:
JP2008526816A
Publication Date:
February 13, 2013
Filing Date:
July 26, 2007
Export Citation:
Assignee:
ULVAC, Inc.
International Classes:
H01B13/00; C23C14/34; C23C14/58; G02F1/1343
Domestic Patent References:
| JPH0372011B2 | 1991-11-15 | |||
| JP2000067657A | 2000-03-03 | |||
| JP2005243249A | 2005-09-08 |
Attorney, Agent or Firm:
Shigeo Ishijima
Hideki Abe
Hideki Abe