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Title:
不揮発性半導体記憶装置
Document Type and Number:
Japanese Patent JP5172920
Kind Code:
B2
Abstract:
According to one embodiment, a nonvolatile semiconductor memory device includes a first memory portion. The first memory portion includes a first base semiconductor layer, a first electrode, a first channel semiconductor layer, a first base tunnel insulating film, a first channel tunnel insulating, a first charge retention layer and a first block insulating film. The first channel semiconductor layer is provided between the first base semiconductor layer and the first electrode, and includes a first channel portion. The first base tunnel insulating film is provided between the first base semiconductor layer and the first channel semiconductor layer. The first channel tunnel insulating film is provided between the first electrode and the first channel portion. The first charge retention layer is provided between the first electrode and the first channel tunnel insulating film. The first block insulating film is provided between the first electrode and the first charge retention layer.

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Inventors:
Fujiki Jun
Naoki Yasuda
Daisuke Matsushita
Application Number:
JP2010207800A
Publication Date:
March 27, 2013
Filing Date:
September 16, 2010
Export Citation:
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Assignee:
Toshiba Corporation
International Classes:
H01L21/336; G11C16/02; G11C16/04; H01L21/8247; H01L27/115; H01L29/788; H01L29/792
Domestic Patent References:
JP2004039965A
JP3094474A
Attorney, Agent or Firm:
Masahiko Hinataji



 
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