Title:
半導体装置およびその製造方法
Document Type and Number:
Japanese Patent JP5176003
Kind Code:
B2
Abstract:
The TFT substrate (100A) in the present invention includes a thin film transistor, a gate line (3a), a source line (13as), and first and second terminals (40a, 40b) for electrically connecting the thin film transistor to an external wiring which are formed on a substrate (1). The first terminal includes a first gate terminal portion (41a) and a first pixel electrode line (29a). The first pixel electrode line is in contact with the first gate terminal portion in a first opening portion (27c) provided in an insulating film (5), and covers an end face of the insulating film in the first opening portion. The second terminal includes a second gate terminal portion (41b) and a second pixel electrode line (29b). The second pixel electrode line is in contact with the second gate terminal portion in a second opening portion (27d) provided in the insulating film, and covers an end face of the insulating film in the second opening portion.
Inventors:
Katsumi Misaki
Application Number:
JP2012521474A
Publication Date:
April 03, 2013
Filing Date:
June 21, 2011
Export Citation:
Assignee:
Sharp Corporation
International Classes:
G09F9/30; G02F1/1345; G02F1/1368; H01L21/3205; H01L21/336; H01L21/768; H01L23/522; H01L29/786
Domestic Patent References:
| JP2010135772A | 2010-06-17 | |||
| JP2003161957A | 2003-06-06 | |||
| JP2007011340A | 2007-01-18 |
Foreign References:
| WO2011070981A1 | 2011-06-16 |
Attorney, Agent or Firm:
Seiji Okuda
Osamu Kita
Ryoji Yamashita
Akiko Miyake
Osamu Kita
Ryoji Yamashita
Akiko Miyake