Title:
磁気トンネル接合、磁気ランダムアクセスメモリ、渦磁化状態の形成方法および渦磁化状態の切り換え方法
Document Type and Number:
Japanese Patent JP5179711
Kind Code:
B2
Abstract:
An MTJ is disclosed in which the free layer and reference layer have a vortex magnetization state that is formed with a clockwise or counterclockwise rotation. The MTJ has a low aspect ratio elliptical shape and the magnetic layers have a dopant that is one of C, N, B, Zr, Ta, Pt, Nb, or Hf to facilitate the flux closure configuration. The vortex magnetization is induced by applying a reverse magnetic field in a direction opposite to the remnant magnetization in a magnetic layer. An antiferromagnetic layer is set in an AFM phase after the vortex state is induced in the adjacent reference layer. Switching the vortex state in the free layer involves applying a first field in a first direction to break the vortex and then applying a smaller second field in a reverse direction to a critical point where a vortex of opposite spin is induced.
Inventors:
Minoru Yasushi
Guo Imin
Go Wang
Guo Imin
Go Wang
Application Number:
JP2005219594A
Publication Date:
April 10, 2013
Filing Date:
July 28, 2005
Export Citation:
Assignee:
Headway Technologies, Inc.
International Classes:
H01L43/08; H01F10/16; H01F10/32; H01L21/8246; H01L27/105; H01L43/10
Domestic Patent References:
| JP2000076844A | ||||
| JP2004327583A |
Attorney, Agent or Firm:
Yasushi Santanzaki