Title:
Cu-Ga合金焼結体スパッタリングターゲット及び同ターゲットの製造方法
Document Type and Number:
Japanese Patent JP5202643
Kind Code:
B2
Abstract:
Disclosed is a sintered Cu-Ga alloy sputtering target which is characterized by being composed of a sintered body of a Cu-Ga alloy powder that has a Ga concentration of 20-60 at% with the balance made up of Cu and unavoidable impurities. The sintered Cu-Ga alloy sputtering target is also characterized in that the sintered body has a relative density of not less than 97%, an average crystal grain size of 5-30 µm and an oxygen content of not more than 400 ppm. It is also effective for the sintered Cu-Ga alloy sputtering target to have an oxygen concentration of not more than 400 ppm and a uniform composition. The target may be produced by a powder production method and hot pressing method of a starting material powder. The Cu-Ga target is free from compositional segregation and no particle adheres to a film that is obtained by sputtering after long-time sputtering. Also disclosed is a method for producing the sintered Cu-Ga alloy sputtering target.
Inventors:
Masakatsu Ikusawa
Hideo Takami
Tomoya Tamura
Hideo Takami
Tomoya Tamura
Application Number:
JP2010535149A
Publication Date:
June 05, 2013
Filing Date:
June 29, 2010
Export Citation:
Assignee:
jx Nippon Mining & Metals Co., Ltd.
International Classes:
C23C14/34; B22F3/14; B22F9/08; C22C1/04; C22C9/00; C22C28/00; H01L31/04
Domestic Patent References:
| JP2000073163A | 2000-03-07 | |||
| JP2008138232A | 2008-06-19 | |||
| JP2000073163A | 2000-03-07 | |||
| JP2008138232A | 2008-06-19 |
Attorney, Agent or Firm:
Isamu Ogoshi