Title:
III族窒化物パワー半導体デバイス
Document Type and Number:
Japanese Patent JP5203725
Kind Code:
B2
Abstract:
An enhancement mode III-nitride power semiconductor device that includes normally-off channels along the sidewalls of a recess and a process for fabricating the same, the device including a first power electrode, a second power electrode, and a gate disposed between the first power electrode and the second power electrode over at least a sidewall of the recess.
Inventors:
Daniel M Kinser
Application Number:
JP2008011038A
Publication Date:
June 05, 2013
Filing Date:
January 22, 2008
Export Citation:
Assignee:
International Rectifier Corporation
International Classes:
H01L21/338; H01L29/778; H01L29/812
Domestic Patent References:
| JP2006286942A | ||||
| JP2001291869A |
Attorney, Agent or Firm:
Kenji Sugimura
Yamaguchi Yusuke
Yamaguchi Yusuke