Title:
半導体装置の製造方法および半導体装置
Document Type and Number:
Japanese Patent JP5205779
Kind Code:
B2
Abstract:
A semiconductor device includes a first transistor having a threshold voltage (Vth) adjusted to a first Vth by a first dopant having a first peak of concentration at a first depth; and a second transistor having the same channel-type as that of the first transistor and having a Vth adjusted to a second Vth by a second dopant having a second peak of concentration at a second depth equal to the first depth and higher concentration than the first dopant; wherein the first dopant and the second dopant are dopants comprising the same constituent element.
More Like This:
Inventors:
Yoshihiro Takao
Application Number:
JP2007072905A
Publication Date:
June 05, 2013
Filing Date:
March 20, 2007
Export Citation:
Assignee:
Fujitsu Semiconductor Limited
International Classes:
H01L21/265; H01L21/8234; H01L27/088
Domestic Patent References:
| JP2000216268A | ||||
| JP9270466A | ||||
| JP10308458A | ||||
| JP2001127168A |
Attorney, Agent or Firm:
Takeshi Hattori