Title:
裏面コンタクト太陽電池用の高光吸収層を有する反射防止膜
Document Type and Number:
Japanese Patent JP5221674
Kind Code:
B2
Abstract:
A multilayer anti-reflection structure for a backside contact solar cell. The anti-reflection structure may be formed on a front side of the backside contact solar cell. The anti-reflection structure may include a passivation level, a high optical absorption layer over the passivation level, and a low optical absorption layer over the high optical absorption layer. The passivation level may include silicon dioxide thermally grown on a textured surface of the solar cell substrate, which may be an N-type silicon substrate. The high optical absorption layer may be configured to block at least 10% of UV radiation coming into the substrate. The high optical absorption layer may comprise high-k silicon nitride and the low optical absorption layer may comprise low-k silicon nitride.
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Inventors:
Rouen, Shin-Chao
Deckester, Dennis
Deckester, Dennis
Application Number:
JP2010538044A
Publication Date:
June 26, 2013
Filing Date:
December 02, 2008
Export Citation:
Assignee:
Sunpower corporation
International Classes:
H01L31/04
Domestic Patent References:
| JP2201972A |
Foreign References:
| WO2006096247A2 |
Attorney, Agent or Firm:
Longhua International Patent Service Corporation