磁気抵抗素子及び磁気ランダムアクセスメモリ

Title:

磁気抵抗素子及び磁気ランダムアクセスメモリ

Document Type and Number:

Japanese Patent JP5232206

Kind Code:

B2

Abstract:

According to one embodiment, a magnetoresistive element includes an electrode layer, a first magnetic layer, a second magnetic layer and a nonmagnetic layer. The electrode layer includes a metal layer including at least one of Mo, Nb, and W. The first magnetic layer is disposed on the metal layer to be in contact with the metal layer and has a magnetization easy axis in a direction perpendicular to a film plane and is variable in magnetization direction. The second magnetic layer is disposed on the first magnetic layer and has a magnetization easy axis in the direction perpendicular to the film plane and is invariable in magnetization direction. The nonmagnetic layer is provided between the first and second magnetic layers. The magnetization direction of the first magnetic layer is varied by a current that runs through the first magnetic layer, the nonmagnetic layer, and the second magnetic layer.

Inventors:

Koji Ueda
Kai Tadashi
Toshihiko Nagase
Katsuya Nishiyama
Eiji Kitagawa
Daibo Tadaomi
Makoto Nagamine
Hiroaki Yoda

Application Number:

JP2010211204A

Publication Date:

July 10, 2013

Filing Date:

September 21, 2010

Export Citation:

Click for automatic bibliography generation Help

Assignee:

Toshiba Corporation

International Classes:

H01L21/8246; H01L27/105; H01L29/82; H01L43/08; H01L43/10

Domestic Patent References:

JP2008211057A
JP2009239120A

Foreign References:

WO2009133650A1

Attorney, Agent or Firm:

Kurata Masatoshi
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Kocho Chojiro
Naoki Kono
Katsu Sunagawa
Katsumura Hiro
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi
Takenori Masanori
Takuzo Ichihara
Yamashita Gen

Previous Patent: JPS5232205

Next Patent: TELEPHONE RECEIVER HOLDER