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Patent Searching and Data


Title:
縦型MOSFETの製造方法
Document Type and Number:
Japanese Patent JP5236281
Kind Code:
B2
Inventors:
Masahiro Niisato
Application Number:
JP2007336781A
Publication Date:
July 17, 2013
Filing Date:
December 27, 2007
Export Citation:
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Assignee:
LAPIS Semiconductor Co., Ltd.
International Classes:
H01L29/78; H01L21/336; H01L29/12
Domestic Patent References:
JP57153469A
JP7034471B2
JP2000286415A
JP2000243957A
JP2000150866A
Attorney, Agent or Firm:
Motohiko Fujimura
Shigeyuki Nagaoka
Shinji Takano