To provide an electronic circuit having a memory function, or an electronic circuit that can be integrated with a memory element.
The electronic circuit includes a plurality of transistors 30a, 30b provided respectively with: a channel comprising a semiconductor; sources 20a, 20b containing a ferromagnetic substance injected with a spin-polarized electron into the channel; drains 22a, 22b for receiving the spin-polarized electron from the channel, and containing a ferromagnetic substance; and gates 24a, 24b for changing commonly an electric field of the channel. A running direction of an electron in each channel of the plurality of transistors is a direction crossed with an effective magnetic field caused by a spin orbital interactive action, and a direction of changing relatively a level of the effective magnetic field applied to the electron in each channel of the plurality of transistors, by a gate voltage applied commonly to the gates.
COPYRIGHT: (C)2011,JPO&INPIT
Junsaku Nitta
| JP2008066596A | ||||
| JP2008166689A |
| WO2004086625A1 |
John Schliemann, 外2名,Nonballistic Spin-Field-Effect Transistor,Physical Review Letters,米国,2003年 4月11日,Vol. 90, No. 14,p. 146801-1~146801-4
Munekazu Ohno and Kanji Yoh1,Datta-Das-type spin-field-effect transistor in the nonballistic regime,Physical Review B,米国,2008年 1月22日,Vol. 77,p. 045323-1~045323-7
Teruo Yokoyama