Title:
半導体装置の作製方法
Document Type and Number:
Japanese Patent JP5268395
Kind Code:
B2
Abstract:
In the present application, is disclosed a method of manufacturing a flexible semiconductor device having an excellent reliability and tolerance to the loading of external pressure. The method includes the steps of: forming a separation layer over a substrate having an insulating surface; forming an element layer including a semiconductor element comprising a non-single crystal semiconductor layer, over the separation layer; forming an organic resin layer over the element layer; providing a fibrous body formed of an organic compound or an inorganic compound on the organic resin layer; heating the organic resin layer; and separating the element layer from the separation layer. This method allows the formation of a flexible semiconductor device having a sealing layer in which the fibrous body is impregnated with the organic resin.
Inventors:
Yoshitaka Dozen
Eiji Sugiyama
Hisashi Otani
Takuya Tsurume
Eiji Sugiyama
Hisashi Otani
Takuya Tsurume
Application Number:
JP2008062127A
Publication Date:
August 21, 2013
Filing Date:
March 12, 2008
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/02; G06K19/07; G06K19/077; H01L21/3205; H01L21/336; H01L21/768; H01L27/12; H01L29/423; H01L29/49; H01L29/786
Domestic Patent References:
| JP2006352100A | ||||
| JP2005268682A | ||||
| JP2000200335A |