Title:
集積型薄膜光電変換装置とその製造方法
Document Type and Number:
Japanese Patent JP5280942
Kind Code:
B2
Abstract:
To provide an integrated type thin film photoelectric conversion device which is superior in photoelectric conversion characteristics at low cost.
The integrated type thin film photoelectric conversion device includes a back transparent conductive layer 2, a laser light absorbing layer 3, a back electrode layer 4, a semiconductor photoelectric conversion unit 5, and a light receiving surface transparent electrode layer 6 which are laminated in order on a translucent substrate 1, wherein those layers are processed with a laser beam.
COPYRIGHT: (C)2011,JPO&INPIT
Inventors:
Yoshida
Masahiro Goto
Toshiaki Sasaki
Masahiro Goto
Toshiaki Sasaki
Application Number:
JP2009135599A
Publication Date:
September 04, 2013
Filing Date:
June 04, 2009
Export Citation:
Assignee:
Kaneka Corporation
International Classes:
H01L31/04
Domestic Patent References:
| JP2003124485A | ||||
| JP2002203976A | ||||
| JP10079522A | ||||
| JP2009004683A |