Title:
不揮発性半導体記憶装置
Document Type and Number:
Japanese Patent JP5288936
Kind Code:
B2
Abstract:
A memory string has a semiconductor layer with a joining portion that is formed to join a plurality of columnar portions extending in a vertical direction with respect to a substrate and lower ends of the plurality of columnar portions. First conductive layers are formed in a laminated fashion to surround side surfaces of the columnar portions and an electric charge storage layer, and function as control electrodes of memory cells. A second conductive layer is formed around the plurality of columnar portions via a gate insulation film, and functions as control electrodes of selection transistors. Bit lines are formed to be connected to the plurality of columnar portions, respectively, with a second direction orthogonal to a first direction taken as a longitudinal direction.
Inventors:
Fukuzumi Yoshiaki
Hideaki Aochi
Ryuta Katsumata
Kito Jie
Kito Dai
Kei'an Tanaka
Yousuke Komori
Megumi Ishizuki
Hideaki Aochi
Ryuta Katsumata
Kito Jie
Kito Dai
Kei'an Tanaka
Yousuke Komori
Megumi Ishizuki
Application Number:
JP2008207655A
Publication Date:
September 11, 2013
Filing Date:
August 12, 2008
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/8247; H01L21/336; H01L27/10; H01L27/115; H01L29/788; H01L29/792
Domestic Patent References:
| JP2003092366A | ||||
| JP10093083A | ||||
| JP2007317874A | ||||
| JP2005093808A |
Attorney, Agent or Firm:
Kisaragi International Patent Business Corporation
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