Title:
垂直磁気記録媒体における中間層膜製造用Ni-W-B系スパッタリングターゲット材の製造方法
Document Type and Number:
Japanese Patent JP5295537
Kind Code:
B2
Abstract:
Disclosed is an alloy for an Ni-W-B intermediate layer film which enables to obtain extremely good recording characteristics due to miniaturization of crystal grains when used as an intermediate layer of a perpendicular magnetic recording medium. Also disclosed is a sputtering target member for producing a thin film. This sputtering target member is composed of, in at%, 1-20% of W, 0.1-10% of B and the balance of Ni and unavoidable impurities. This sputtering target member can be produced by solidifying and molding a raw material powder, which is prepared by gas atomization and composed of, in at%, 1-20% of W, 0.1-10% of B and the balance of Ni and unavoidable impurities.
Inventors:
Toshiyuki Sawada
Atsushi Kishida
Akihiko Yanagiya
Atsushi Kishida
Akihiko Yanagiya
Application Number:
JP2007247182A
Publication Date:
September 18, 2013
Filing Date:
September 25, 2007
Export Citation:
Assignee:
Sanyo Special Steel Co., Ltd.
International Classes:
C23C14/34; B22F3/15; B22F3/17; B22F9/08; C22C19/03; G11B5/64; G11B5/851; G11B23/30
Domestic Patent References:
| JP2007179598A | ||||
| JP2003303787A | ||||
| JP2006265656A |
Attorney, Agent or Firm:
Shiina Akira